Browsing by Author "Idris Bouchama"

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    Numerical study of high‑efciency CIGS solar cells by inserting a BSF µc‑Si:H layer
    (2022) Rafk Zouache; Idris Bouchama; Okba Saidani; · Layachi Djedoui; Elyazid Zaidi
    In this paper, we present a simulation study of Cu(In,Ga)Se2 (CIGS) based solar cell using a physically based two-dimensional device simulator Silvaco-Atlas under AM1.5 illumination. First, we studied the efect of CIGS layer thickness, doping con centrations, and defects on the J–V properties and the quantum efciency (QE) of a conventional cell. The simulated structure shows an open circuit voltage equal to 0.80 V, a short circuit current density equal to 30.03 mA/cm2 , a fll factor equal to 82.77% and the obtained efciency of the conventional cell is 19.80% with CIGS absorber layer thickness of about 1.5 μm, our simulation results of the CIGS solar cell are in good agreement with the simulated and experimental results found in literature. In order to improve the solar cells efciency, the back surface feld (BSF) based on hydrogenated microcrystal line silicon μc-Si:H(p+) layer has been inserted between the back contact (Mo) and the CIGS absorber layer, in this case the structure presents an open voltage equal to 0.84 V, a short circuit current density equal to 32.55 mA/cm2 , a fll factor equal to 85.31% and an efciency of 23.42%. The obtained results demonstrate that the addition of μc-Si:H(p+) BSF layer increases the efciency of CIGS solar cells, reaching a maximum value of 23.42% for 1.5 μm of CIGS thickness and 10 nm for μc-Si:H(p+) BSF layer
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    Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer
    (Université de M'sila, 2020) Idris Bouchama; Samah Boudour; Nadir Bouarissa; Zahir Rouabah
    In this present contribution, AMPS-1D device simulator is employed to study the performances of superstrate SLG/TCO/p-Cu(In,Ga)Se2(CIGS)/n-ODC/n-In2Se3/Metal thin film solar cells. The impact of the TCO and Metal work functions on the cell performance has been investigated. The combination of optical transparency and electrical property for TCO front contact layer is found to yield high efficiency. The obtained results show that the TCO work function should be large enough to achieve high conversion efficiency for superstrate CIGS solar cell. Nevertheless, it is desirable for Metal back contact layer to have low work function to prevent the effect of band bending in the n-In2Se3/Metal interface. Several TCOs materials and metals have been tested respectively as a front and back contact layers for superstrate CIGS solar cells. An efficiency of 20.18%, with Voc z 0.71 V, Jsc z 35.36 mA/cm2 and FF z 80.42%, has been achieved with ZnSn2O3-based as TCO front contact layer. In the case of SnO2:F front contact and indium back contact layers, an efficiency of 16.31%, with Voc z 0.64 V, Jsc z 31.4 mA/cm2 and FF z 79.4%, has been obtained. The present results of simulation suggest an improvement of superstrate CIGS solar cells efficiency for feasible fabrication.