Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer
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Date
2020
Journal Title
Journal ISSN
Volume Title
Publisher
Université de M'sila
Abstract
In this present contribution, AMPS-1D device simulator is employed to study the performances of
superstrate SLG/TCO/p-Cu(In,Ga)Se2(CIGS)/n-ODC/n-In2Se3/Metal thin film solar cells. The impact of the
TCO and Metal work functions on the cell performance has been investigated. The combination of optical
transparency and electrical property for TCO front contact layer is found to yield high efficiency. The
obtained results show that the TCO work function should be large enough to achieve high conversion
efficiency for superstrate CIGS solar cell. Nevertheless, it is desirable for Metal back contact layer to have
low work function to prevent the effect of band bending in the n-In2Se3/Metal interface. Several TCOs
materials and metals have been tested respectively as a front and back contact layers for superstrate CIGS
solar cells. An efficiency of 20.18%, with Voc z 0.71 V, Jsc z 35.36 mA/cm2 and FF z 80.42%, has been
achieved with ZnSn2O3-based as TCO front contact layer. In the case of SnO2:F front contact and indium
back contact layers, an efficiency of 16.31%, with Voc z 0.64 V, Jsc z 31.4 mA/cm2 and FF z 79.4%, has
been obtained. The present results of simulation suggest an improvement of superstrate CIGS solar cells
efficiency for feasible fabrication.
Description
Keywords
Cu(In,Ga)Se2 material Superstrate solar cells Transparent conducting oxides Barrier height AMPS-1D