The effect of Al and In concentrations on the properties of electrodeposited Cu(In,Al)Se2 using two electrode system without the addition of complexing agents
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Date
2017
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Publisher
Université de M'sila
Abstract
Chalcopyrite Cu(In,Al)Se2 thin films were deposited by electrodeposition process onto ITO
coated glass substrates from de-ionized water solution consisting of CuCl2, InCl3, AlCl3
and SeO2 precursors. The effect of Al and In concentrations in precursor solutions on the
properties of Cu(In,Al)Se2 films were investigated by varing x ratio (x = [Al]/[In + Al]) from 0
to 0.75. The structural, optical and electrical properties of films were studied, respectively,
using X-ray diffraction, Raman spectroscopy, UV-visible spectrophotometer, Hall-effect and
four-point probe method. The X-ray diffraction analysis proved that the film deposited at
x = 0.75 present Cu(In,Al)Se2 single phase in its chalcopyrite structure and with preferred
orientation along [112] direction, however the others films show the main Cu(In,Al)Se2
chalcopyrite with the formation of In2Se3 as a secondary phase.
The band gap energy of the films was controlled from 1.17 to 1.65 eV by adjusting the Al
and In concentrations in the precursor solutions. The Raman analysis revealed that all the
films mainly consist of a chalcopyrite structure and the film deposited at x = 0.25 contain the
ternary compounds CuAlSe2 as secondary phase. This last film showed n-type conduction
while the rest of the films showed p-type conduction. The electrical resistivity is in the
range of 0.06–1.9 cm.
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Keywords
Thin films Electrodeposition Cu(In,Al)Se2 x ratio