Gallium Antimonide Spherical Semiconductor Quantum Dots
Loading...
Date
2022
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
université msila
Abstract
The quantum effects at the nano-metric level have been observed in a variety of confined structures, particularly in semiconductor
quantum dots. In this contribution, the electronic and optical properties of GaSb spherical semiconductor quantum dots are
investigated. For the calculations, the pseudo potential approach was employed. The size dependence of the energy gaps at Г, X
and L points, the effective masses of electrons and heavy-holes, the refractive index, and the dielectric function for a studied GaSb
spherical quantum dot are analyzed and discussed. When the degree of quantum confinement effect was changed by decreasing the
radius of the spherical quantum dots, a striking charge in comparison to the bulk values has been obtained. Our results indicate that
as the quantum dot radius is raised, most of properties rapidly decrease. This demonstrates an improvement in the mobility of the
material. However, the refractive index and the dielectric constant are increased with increasing the radius of the nano-crystal.
© 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. [DOI: 10.1149/2162-8777/
ac942e]