Effet de la pression hydrostatique sur les propriétés électroniques du semiconducteur AlAs dans la phase zinc blende
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Date
2003
Authors
Journal Title
Journal ISSN
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Publisher
UNIVERSITE MOHAMED BOUDIAF - M’SILA
Abstract
In conclusion, the effect of hydrostatic pressure on electronic properties of
AlAs, covering the full range 0-120 kbar has been computed by means of local
model pseudopotential method. The latter was combined with the Harrison bond-
orbital model so as to determine the elastic constants which were used for
formulating the generalized stability criteria and analyzing the mechanical
instability of the material of interest.
Our calculated quantities, namely the energy-band gaps, effective masses and
elastic constants agreed very well with the available experimental data. The
computed electronic properties were found to exhibit a non-linear behavior with
a
a
0
∆ .
The generalization of the elastic stability criteria predicted that there is no
structural phase transformation for AlAs under hydrostatic pressure up to 120 kbar
which is consistent with the experimental observations confirming thus the validity
of these criteria in predicting the structural phase transition in compound
semiconductors as reported by previous theoretical results.