Modeling ofsub-bandanddiametereffectincarrier concentration ofCNTFET
| dc.contributor.author | Abdelmalek Mouatsi | |
| dc.contributor.author | MimiaMarir-Benabbas | |
| dc.date.accessioned | 2021-11-18T09:10:40Z | |
| dc.date.available | 2021-11-18T09:10:40Z | |
| dc.date.issued | 2021 | |
| dc.description.abstract | Carbon nanotubes(CNTs)havebeenseenasapotentiallyfuturematerialtoprovidean ultrasmall device(CNTFET(CarbonNanotubeFieldEffectTransistor)).Therefore,the studiesofsub-bandseffectsareneededinordertofindtheenhancementofcarrier transport inCNTFET. Also inthispaperthebandstructureoftherolled-upnanotubecanbeobtainedby zone-foldingfromthebandstructureofthegraphenesheet.Thismethodisusedinthis work andwesimulatedandanalyzedthebandstructureofcarbonnanotube.Wepresent analytical modelingofcarrierconcentrationinazigzagsemiconductingofcarbon nanotube fieldeffecttransistor(CNFET)usingthedispersionrelation E(k) (thefirstthree sub-bands)andgiventhedensityofstates(DOS),thecarrierconcentrationisobtained based onanumericalmethodasanalternativetotheusualFermi–Dirac integrals.Inorder to findtheinfluenceofthefirstthreesub-bandsenergyanddiameter dt of CNTinnon- degenerateanddegenerateregionofthecarrierconcentrationinCNTFET.Theresults obtainedshowedthatthediameterandtheenergyofsub-bandhaveasignificantimpact on thecarrierconcentrationofCNTFET | en_US |
| dc.identifier.uri | http://dspace.univ-msila.dz:8080//xmlui/handle/123456789/27348 | |
| dc.publisher | Université de M'sila | en_US |
| dc.subject | Carrier concentration Band structure Carbon nanotubediameter CNTFET Zone folding | en_US |
| dc.title | Modeling ofsub-bandanddiametereffectincarrier concentration ofCNTFET | en_US |
| dc.type | Article | en_US |