(Université de M'sila, 2021) Abdelmalek Mouatsi; MimiaMarir-Benabbas
Carbon nanotubes(CNTs)havebeenseenasapotentiallyfuturematerialtoprovidean
ultrasmall device(CNTFET(CarbonNanotubeFieldEffectTransistor)).Therefore,the
studiesofsub-bandseffectsareneededinordertofindtheenhancementofcarrier
transport inCNTFET.
Also inthispaperthebandstructureoftherolled-upnanotubecanbeobtainedby
zone-foldingfromthebandstructureofthegraphenesheet.Thismethodisusedinthis
work andwesimulatedandanalyzedthebandstructureofcarbonnanotube.Wepresent
analytical modelingofcarrierconcentrationinazigzagsemiconductingofcarbon
nanotube fieldeffecttransistor(CNFET)usingthedispersionrelation E(k) (thefirstthree
sub-bands)andgiventhedensityofstates(DOS),thecarrierconcentrationisobtained
based onanumericalmethodasanalternativetotheusualFermi–Dirac integrals.Inorder
to findtheinfluenceofthefirstthreesub-bandsenergyanddiameter dt of CNTinnon-
degenerateanddegenerateregionofthecarrierconcentrationinCNTFET.Theresults
obtainedshowedthatthediameterandtheenergyofsub-bandhaveasignificantimpact
on thecarrierconcentrationofCNTFET