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Effet de la pression hydrostatique sur les propriétés électroniques du semiconducteur AlAs dans la phase zinc blende
(UNIVERSITE MOHAMED BOUDIAF - M’SILA, 2003) Aouina, Nabila Yasmina
In conclusion, the effect of hydrostatic pressure on electronic properties of AlAs, covering the full range 0-120 kbar has been computed by means of local model pseudopotential method. The latter was combined with the Harrison bond- orbital model so as to determine the elastic constants which were used for formulating the generalized stability criteria and analyzing the mechanical instability of the material of interest. Our calculated quantities, namely the energy-band gaps, effective masses and elastic constants agreed very well with the available experimental data. The computed electronic properties were found to exhibit a non-linear behavior with a a 0 ∆ . The generalization of the elastic stability criteria predicted that there is no structural phase transformation for AlAs under hydrostatic pressure up to 120 kbar which is consistent with the experimental observations confirming thus the validity of these criteria in predicting the structural phase transition in compound semiconductors as reported by previous theoretical results.