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dc.contributor.author |
MESSAOUDENE, IKRAM |
|
dc.date.accessioned |
2019-02-24T12:22:18Z |
|
dc.date.available |
2019-02-24T12:22:18Z |
|
dc.date.issued |
2014 |
|
dc.identifier.uri |
http://dspace.univ-msila.dz:8080//xmlui/handle/123456789/9164 |
|
dc.description.abstract |
The present work deals with the investigation of the quantum confinement effect on the
band structure of quantum well semiconductors, namely GaAs, InAs, InP, CdTe and ZnTe.
The calculations have been made using the effective mess method. Our results showed that
when one proceeds from bulk to nanostructed materials of interest, the electric and optical
properties change significantly suggesting thus that nanometerils may give sure diver
opportunities for obtaining new materials with new fundamental properties |
en_US |
dc.language.iso |
fr |
en_US |
dc.publisher |
Université Mohamed BOUDIAF de M'Sila |
en_US |
dc.subject |
Quantum confinement; Band structure; Semiconductors, Quantum wells |
en_US |
dc.title |
Effet de confinement quantique sur la structure de bande des semiconducteurs à puits quantiques |
en_US |
dc.type |
Thesis |
en_US |
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