Effet de confinement quantique sur la structure de bande des semiconducteurs à puits quantiques

Abstract

The present work deals with the investigation of the quantum confinement effect on the band structure of quantum well semiconductors, namely GaAs, InAs, InP, CdTe and ZnTe. The calculations have been made using the effective mess method. Our results showed that when one proceeds from bulk to nanostructed materials of interest, the electric and optical properties change significantly suggesting thus that nanometerils may give sure diver opportunities for obtaining new materials with new fundamental properties